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The inset of Figure 1a (iii) shows a schematic diagram of the measurement setup of the PZTNP-CNT FET used in this work. The bending displacement is generated by using a vacuum suction cup without using a vacuum pump. In order to prevent the short-circuit of the film and breakage of CNTs, the PZTNPs on the CNTs should be removed by washing the film with acetone at room temperature for 1 hr. Figure 2 shows the output voltages of the FETs as a function of the bending radius at the frequency of 1 MHz. The electrical resistance of the PZTNP-CNT FET changes depending on the applied bending radius, and the resistance of the FET increases upon increasing the bending radius. A larger resistance at a lower bending radius is observed due to the reduction of the length of the PZTNP-CNT film, which is formed by the adhesion of PZTNP-CNT on the CNTs by PTFE. We can confirm that the resistance change is generated by the bending operation using the vacuum suction cup. We calculate the resistance change in the FET. The sensitivity of the FET is evaluated by measuring the output voltage, and we compare it with the output of the piezoelectric film being used. The sensitivity of the FET is 4.46 mV/Pa, which is more than twice as much as that of the PZT film of 5.83 mV/Pa. A bending radius of 30 mm is selected as a representative radius for a vacuum-suction cup operation, and its output voltage corresponds to 0.16 V, which is measured with an oscilloscope. The measurement of the output voltage of the FET enables us to observe the I-V characteristics of the FET at the bending radius of 30 mm. Figure 2b shows the output characteristics of the FET at a bending radius of 30 mm. The I-V curves measured at a bending radius of 30 mm are shown in Figure 2c, and the curves are remarkably asymmetric with respect to the polarity of the applied voltage. As the direction of the applied voltage changes, the direction of the output voltage also changes. The output curves change according to the direction of the applied voltage, and the output voltage is sensitively dependent on the bending radius.

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